➀ Fudan University researchers have developed a new non-volatile flash memory technology named 'PoX'; ➁ This technology could revolutionize storage by bridging the performance gap between volatile and non-volatile memory; ➂ The memory operates at an incredible speed of 25 billion operations per second, significantly improving over the previous record.
Recent #flash memory news in the semiconductor industry
➀ Nvidia has overtaken Samsung and Intel to become the number one semiconductor company in the world;
➁ Worldwide semiconductor revenue reached $655.9 billion in 2024, up 21% from $542.1 billion in 2023;
➂ Samsung Electronics maintained second place due to gains in DRAM and flash memory, while Intel's revenue grew by only 0.8%.
➀ The Samsung 9100 Pro is Samsung's answer to the high-end PCIe 5.0 storage market, offering good performance and power efficiency.
➁ The drive is available in capacities up to 8TB and uses Samsung's 236-Layer V8 TLC flash memory.
➂ While not the fastest on the market, the 9100 Pro provides a solid and refined option for those seeking high-end storage.
➀ This mini-review discusses the Samsung Evo Select 1TB microSDXC card, highlighting its performance and features;
➁ The card is compared to other Samsung products and competitors in the market;
➂ The review includes an overview of the card's specifications and usability.
➀ Samsung Electronics is releasing a 1Tbit 3D NAND flash memory with storage cell layers up to 400+ layers, achieving a memory density of 28.2Gbit/mm2 using TLC method.
➁ Kioxia and Western Digital's joint development team is reporting a 1Tbit 3D NAND flash memory with 332 layers, with a memory density of up to 29Gbit/mm2.
➂ SK Hynix has developed a 2Tbit 3D NAND flash memory with 321 layers, using QLC method multi-value storage.
➃ Samsung is currently developing the 9th generation 3D NAND with 286 layers and is working on 400-layer technology.
➄ SK Hynix is exploring the potential of manufacturing 3D NAND at ultra-low temperatures, aiming to produce new generation products with over 400 layers by 2025.➅ Kioxia plans to mass-produce 3D NAND storage devices with over 1,000 layers by 2031.
➆ The journey towards 1,000-layer 3D NAND involves multiple improvements in manufacturing processes, including vertical, horizontal, and logical aspects.
➀ JEDEC发布JESD220G: Universal Flash Storage 4.1，是UFS标准的更新；➁ UFS 4.1针对功率效率至关重要的应用提供更快的数据访问和改进的性能；➂ JEDEC还更新了互补的JESD223F UFS主机控制器接口（UFSHCI）标准。
➀ ReRAM is becoming the preferred alternative to flash memory due to its cost, complexity, power, and performance advantages.
➁ ReRAM is finding its place in power management ICs, IoT, MCU, and edge AI applications.
➂ ReRAM offers inherent security for secure applications and is poised to become a cornerstone for neuromorphic computing.
➀ STMicroelectronics introduces Page EEPROM, a new memory device offering the power efficiency of EEPROM and the capacity and speed of flash memory; ➁ The new Page EEPROM is designed for ultra-low-power IoT modules and solves the EEPROM-versus-flash debate with a lower-power alternative; ➂ It boasts power efficiency exceeding most rival EEPROMs, high performance with a 320Mb/s read speed, and longevity with 100-year data retention and 500,000-cycle write endurance; ➃ STMicro has launched three models of Page EEPROM: M95P08, M95P16, and M95P32, with support for byte-level operations and page programming; ➄ The X-NUCLEO-PGEEZ1 evaluation board hosts a M95P32 Page EEPROM and is accessible over an SPI bus for rapid experimentation.
1. Kioxia announces sampling of its eighth-generation BiCS 3D memory products with a maximum capacity of 2 terabits, doubling the previous largest capacity; 2. The new flash memory chips can achieve 4 TB of capacity in a single package and offer a transfer rate of 3.6 Gbps per die; 3. Kioxia also releases a new 1-Tbit part optimized for performance, offering 30% faster sequential writes and 15% quicker read latency.